Reference Only

TK100E06N1,S1X

MOSFETs 60V N-Ch PWR FET 1.9mOhm 10V 10uA.

Manufacturer:

Mfr Part:
TK100E06N1,S1X

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
Mounting StyleThrough Hole
Package / CaseTO-220-3
ConfigurationSingle
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesTK100E06N1
PackagingTube
Channel ModeEnhancement
Id - Continuous Drain Current263 A
Number of Channels1 Channel
Pd - Power Dissipation255 W
Product TypeMOSFETs
Qg - Gate Charge140 nC
Rds On - Drain-Source Resistance1.9 mOhms
SubcategoryTransistors
TechnologySi
TradenameU-MOSVIII-H
Transistor PolarityN-Channel
Transistor Type1 N-Channel
Vds - Drain-Source Breakdown Voltage60 V
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 5 Weeks
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(Minimum: 50 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.22$111.00
$1.95$195.00
$1.64$820.00
$1.58$1,580.00
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