Reference Only
TK090E65Z,S1X
MOSFETs .
Datasheet
TK090E65Z,S1X DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 30 A | |
| Rds On - Drain-Source Resistance | 75 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qg - Gate Charge | 47 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 230 W | |
| Channel Mode | Enhancement | |
| Packaging | Tube | |
| Fall Time | 4 ns | |
| Product Type | MOSFETs | |
| Rise Time | 30 ns | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 50 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $4.64 | $232.00 | |
| $4.25 | $425.00 | |
| $3.59 | $1,795.00 | |
| $3.41 | $3,410.00 |
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