TJ90S04M3L Toshiba

TJ90S04M3L

MOSFETs

Manufacturer:

Mfr Part:
TJ90S04M3L

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current90 A
Rds On - Drain-Source Resistance6 mOhms
Vgs - Gate-Source Voltage- 20 V, 10 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge172 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation180 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameU-MOSVI
ConfigurationSingle
Fall Time426 ns
Product TypeMOSFETs
Rise Time76 ns
SeriesTJ20A10M3
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time1305 ns
Typical Turn-On Delay Time94 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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