TJ20A10M3 Toshiba

TJ20A10M3

MOSFETs

Manufacturer:

Mfr Part:
TJ20A10M3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseSC-67-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance90 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge120 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation35 W
Channel ModeEnhancement
TradenameU-MOSVI
ConfigurationSingle
Fall Time105 ns
Product TypeMOSFETs
Rise Time13 ns
SeriesTJ20A10M3
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time420 ns
Typical Turn-On Delay Time27 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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