SMBTA 06 E6327 Toshiba

SMBTA 06 E6327

Bipolar Transistors - BJT

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Mfr Part:
SMBTA 06 E6327

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
SeriesSMBTA
Collector- Base Voltage VCBO80 V
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
Emitter- Base Voltage VEBO4 V
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current500 mA
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Pd - Power Dissipation330 mW
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
TechnologySi
Transistor PolarityNPN

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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