
MT6L57AE (TE85L)
RF Bipolar Transistors
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | RF Bipolar Transistors | |
| Series | MT6L57 | |
| Technology | Si | |
| Transistor Polarity | NPN | |
| DC Collector/Base Gain hfe Min | 70 at 5 mA at 1 V | |
| Collector- Emitter Voltage VCEO Max | 5 V | |
| Emitter- Base Voltage VEBO | 1.5 V at TR 1, 2 V at TR 2 | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 125 C | |
| Configuration | Dual | |
| Mounting Style | SMD/SMT | |
| Package / Case | ES6-6 | |
| Pd - Power Dissipation | 100 mW | |
| Product Type | RF Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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