Reference Only

HN7G09FE(TE85L,F)

Obsolete
Bipolar Transistors - BJT Vceo=50V Vds=30V Ic=100mA Id=100mA

Manufacturer:

Mfr Part:
HN7G09FE(TE85L,F)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
SeriesHN7G09
Mounting StyleSMD/SMT
PackagingReel
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max50 V
ConfigurationDual
Continuous Collector Current100 mA
DC Collector/Base Gain hfe Min80
Emitter- Base Voltage VEBO10 V
Gain Bandwidth Product fT250 MHz
Package / CaseES6-6
Pd - Power Dissipation100 mW
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
TechnologySi
Transistor PolarityNPN

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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Reel

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