Reference Only

HN4C51J(TE85L,F)

Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A.

Manufacturer:

Mfr Part:
HN4C51J(TE85L,F)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
SeriesHN4C51
PackagingReel
Collector- Base Voltage VCBO120 V
Collector-Emitter Saturation Voltage300 mV
Collector- Emitter Voltage VCEO Max120 V
ConfigurationDual
Continuous Collector Current100 mA
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max700
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current100 mA
Package / CaseSOT-25-5
Pd - Power Dissipation300 mW
SubcategoryTransistors
TechnologySi
Transistor PolarityNPN

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 6 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 3,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.127$381.00
$0.116$696.00
$0.10$900.00
$0.096$2,304.00
Need more?