Reference Only
HN4B102J
Bipolar Transistors - BJT
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | Bipolar Transistors - BJT | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOT-25-5 | |
| Transistor Polarity | NPN, PNP | |
| Configuration | Dual | |
| Maximum DC Collector Current | 8 A | |
| Collector- Emitter Voltage VCEO Max | 30 V | |
| Collector- Base Voltage VCBO | 60 V, 30 V | |
| Emitter- Base Voltage VEBO | 7 V | |
| Maximum DC Collector Current | 8 A | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Series | HN4B102 | |
| Continuous Collector Current | - 1.8 A, 2 A | |
| DC Collector/Base Gain hfe Min | 200 | |
| DC Current Gain hFE Max | 500 | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| HTS | 8541290095 |
| TARIC | 8541210000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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