Reference Only

HN4B102J

Bipolar Transistors - BJT

Manufacturer:

Mfr Part:
HN4B102J

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
Mounting StyleSMD/SMT
Package / CaseSOT-25-5
Transistor PolarityNPN, PNP
ConfigurationDual
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max30 V
Collector- Base Voltage VCBO60 V, 30 V
Emitter- Base Voltage VEBO7 V
Maximum DC Collector Current8 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesHN4B102
Continuous Collector Current- 1.8 A, 2 A
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max500
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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