Reference Only

HN4B102J(TE85L,F)

Bipolar Transistors - BJT .

Manufacturer:

Mfr Part:
HN4B102J(TE85L,F)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
Mounting StyleSMD/SMT
SeriesHN4B102
Collector- Base Voltage VCBO60 V, 30 V
Collector- Emitter Voltage VCEO Max30 V
ConfigurationDual
Continuous Collector Current- 1.8 A, 2 A
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max500
Emitter- Base Voltage VEBO7 V
Maximum DC Collector Current8 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
Package / CaseSOT-25-5
Pd - Power Dissipation1.1 W
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Transistor PolarityNPN, PNP

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Please adjust quantity to minimum and multiple values.
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Reel

(Minimum: 3,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.255$765.00
$0.235$1,410.00
$0.206$1,854.00
$0.20$4,800.00
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