Reference Only

HN4B04J(TE85L,F)

End of Life
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A

Manufacturer:

Mfr Part:
HN4B04J(TE85L,F)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
Collector- Base Voltage VCBO35 V
Collector-Emitter Saturation Voltage100 mV
Collector- Emitter Voltage VCEO Max30 V
ConfigurationDual
Continuous Collector Current500 mA
DC Collector/Base Gain hfe Min70
DC Current Gain hFE Max240
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT200 MHz, 300 MHz
Maximum DC Collector Current500 mA
Mounting StyleSMD/SMT
PackagingReel
Package / CaseSOT-25-5
Pd - Power Dissipation300 mW
Product TypeBJTs - Bipolar Transistors
SeriesHN4B04
SubcategoryTransistors
TechnologySi
Transistor PolarityNPN, PNP

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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