Reference Only

HN4B01JE(TE85L,F)

Bipolar Transistors - BJT Vceo=-50V Vceo=50V

Manufacturer:

Mfr Part:
HN4B01JE(TE85L,F)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
SeriesHN4B01
PackagingReel
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max50 V
ConfigurationDual
DC Collector/Base Gain hfe Min120
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT80 MHz
Maximum DC Collector Current150 mA
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation100 mW
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
TechnologySi
Transistor PolarityNPN, PNP

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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