Reference Only

HN4A56JU(TE85L,F)

Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz.

Manufacturer:

Mfr Part:
HN4A56JU(TE85L,F)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Transistor PolarityPNP
ConfigurationDual
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT60 MHz
Maximum Operating Temperature+ 150 C
PackagingReel
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Reel

(Minimum: 3,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.063$189.00
$0.054$324.00
$0.047$423.00
$0.043$1,032.00
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