HN3C10FU (TE85L) Toshiba

HN3C10FU (TE85L)

Bipolar Transistors - BJT

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HN3C10FU (TE85L)

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Not Assigned

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Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / Case2-2J1A
Transistor PolarityNPN
ConfigurationDual
Maximum DC Collector Current80 mA
Collector- Emitter Voltage VCEO Max12 V
Collector- Base Voltage VCBO20 V
Emitter- Base Voltage VEBO3 V
Maximum DC Collector Current80 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT7 GHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
SeriesHN3C10
DC Collector/Base Gain hfe Min80 at 20 mA, 10 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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