Reference Only

HN2C01FEYTE85LF

End of Life
Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A

Manufacturer:

Mfr Part:
HN2C01FEYTE85LF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-563-6
Transistor PolarityNPN
ConfigurationDual
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation100 mW
Gain Bandwidth Product fT60 MHz
SeriesHN2C01
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max400
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Reel

Pricing not available for this package type
Need pricing?