GT60N322(Q) Toshiba

GT60N322(Q)

Obsolete
IGBTs IGBT 1000V 57A

Manufacturer:

Mfr Part:
GT60N322(Q)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3P
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1 kV
Maximum Gate Emitter Voltage- 25 V, 25 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesGT60N322
PackagingBulk
Continuous Collector Current Ic Max57 A
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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