Reference Only

GT60M303(Q)

Obsolete
IGBTs 900V/60A DIS+FRD Trench

Manufacturer:

Mfr Part:
GT60M303(Q)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3P
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max900 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C60 A
Pd - Power Dissipation170 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesGT60M303
Continuous Collector Current Ic Max60 A
Gate-Emitter Leakage Current500 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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