GT50N322A(Q) Toshiba

GT50N322A(Q)

IGBTs

Manufacturer:

Mfr Part:
GT50N322A(Q)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3PN-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1 kV
Collector-Emitter Saturation Voltage2.2 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C50 A
Pd - Power Dissipation156 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesGT50N322
Continuous Collector Current Ic Max120 A
Gate-Emitter Leakage Current500 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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