GT50JR21(STA1,E Toshiba

GT50JR21(STA1,E

IGBTs

Manufacturer:

Mfr Part:
GT50JR21(STA1,E

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
Collector-Emitter Saturation Voltage1.45 V
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
Continuous Collector Current Ic Max100 A
Continuous Collector Current at 25 C50 A
Gate-Emitter Leakage Current100 nA
Maximum Gate Emitter Voltage- 25 V, 25 V
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-3PN-3
Pd - Power Dissipation230 W
Product TypeIGBT Transistors
SeriesGT50JR21
SubcategoryIGBTs
TechnologySi

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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