
GT50JR21(STA1,E
IGBTs
Datasheet
GT50JR21(STA1,E DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | IGBTs | |
| Collector-Emitter Saturation Voltage | 1.45 V | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Configuration | Single | |
| Continuous Collector Current Ic Max | 100 A | |
| Continuous Collector Current at 25 C | 50 A | |
| Gate-Emitter Leakage Current | 100 nA | |
| Maximum Gate Emitter Voltage | - 25 V, 25 V | |
| Maximum Operating Temperature | + 175 C | |
| Minimum Operating Temperature | - 55 C | |
| Mounting Style | Through Hole | |
| Package / Case | TO-3PN-3 | |
| Pd - Power Dissipation | 230 W | |
| Product Type | IGBT Transistors | |
| Series | GT50JR21 | |
| Subcategory | IGBTs | |
| Technology | Si |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| HTS | 8541290095 |
| TARIC | 8541290000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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