Reference Only

GT50J341,Q

IGBTs .

Manufacturer:

Mfr Part:
GT50J341,Q

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3PN-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max600 V
Collector-Emitter Saturation Voltage1.6 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C50 A
Pd - Power Dissipation200 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesGT50J341
PackagingTray
Continuous Collector Current Ic Max100 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tray

(Minimum: 100 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.29$229.00
$1.89$945.00
Need more?
Contact Us