Reference Only

GT40WR21,Q

IGBTs .

Manufacturer:

Mfr Part:
GT40WR21,Q

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3PN-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.8 kV
Collector-Emitter Saturation Voltage2.9 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C40 A
Pd - Power Dissipation375 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesGT40WR21
PackagingTray
Continuous Collector Current Ic Max80 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 5 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tray

(Minimum: 100 / Multiples: 1)
Quantity Unit PriceExt. Price
$7.06$706.00
$6.42$3,210.00
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