GT30J341,STA1E Toshiba

GT30J341,STA1E

IGBTs

Manufacturer:

Mfr Part:
GT30J341,STA1E

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
Package / CaseTO-3PN-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesGT30J341
Collector-Emitter Saturation Voltage1.5 V
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
Continuous Collector Current Ic Max120 A
Continuous Collector Current at 25 C59 A
Gate-Emitter Leakage Current100 nA
Maximum Gate Emitter Voltage- 25 V, 25 V
Mounting StyleThrough Hole
Pd - Power Dissipation230 W
Product TypeIGBT Transistors
SubcategoryIGBTs
TechnologySi

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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