
GT25G101(Q)
Obsolete
IGBTs
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | IGBTs | |
| Technology | Si | |
| Package / Case | TO-220-3 | |
| Mounting Style | Through Hole | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 400 V | |
| Maximum Gate Emitter Voltage | - 25 V, 25 V | |
| Maximum Operating Temperature | + 150 C | |
| Series | GT25G101 | |
| Continuous Collector Current Ic Max | 25 A | |
| Height | 9.1 mm | |
| Length | 10.3 mm | |
| Product Type | IGBTs | |
| Subcategory | Transistors | |
| Width | 4.7 mm |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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