Reference Only

GT20N135SRA,S1E

IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A.

Manufacturer:

Mfr Part:
GT20N135SRA,S1E

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.35 kV
Collector-Emitter Saturation Voltage2.4 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C40 A
Pd - Power Dissipation312 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 9 Weeks
Please adjust quantity to minimum and multiple values.
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(Minimum: 30 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.65$79.50
$2.29$274.80
$2.22$1,132.20
$2.16$2,203.20
$2.14$5,392.80
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