Reference Only
GT20N135SRA,S1E
IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A.
Datasheet
GT20N135SRA,S1E DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | IGBTs | |
| Technology | Si | |
| Package / Case | TO-247-3 | |
| Mounting Style | Through Hole | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 1.35 kV | |
| Collector-Emitter Saturation Voltage | 2.4 V | |
| Maximum Gate Emitter Voltage | - 25 V, 25 V | |
| Continuous Collector Current at 25 C | 40 A | |
| Pd - Power Dissipation | 312 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Packaging | Tube | |
| Gate-Emitter Leakage Current | 100 nA | |
| Product Type | IGBT Transistors | |
| Subcategory | IGBTs |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 9 Weeks
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 30 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $2.65 | $79.50 | |
| $2.29 | $274.80 | |
| $2.22 | $1,132.20 | |
| $2.16 | $2,203.20 | |
| $2.14 | $5,392.80 |
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