Reference Only
2SK2700(Q,T)
Obsolete
MOSFETs
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-220-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 900 V | |
| Id - Continuous Drain Current | 3 A | |
| Rds On - Drain-Source Resistance | 4.3 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 400 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 6 ns | |
| Product Type | MOSFETs | |
| Rise Time | 25 ns | |
| Series | 2SK2700 | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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