Reference Only

2SD1223(TE16L1,NQ)

Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min.

Manufacturer:

Mfr Part:
2SD1223(TE16L1,NQ)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO100 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.5 V
Maximum DC Collector Current4 A
Pd - Power Dissipation1 W
Maximum Operating Temperature+ 150 C
Series2SD1223
PackagingReel
Continuous Collector Current4 A
DC Collector/Base Gain hfe Min2000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 19 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Reel

(Minimum: 2,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.407$814.00
$0.368$1,472.00
$0.331$3,310.00
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