2SC5387 (F,M) Toshiba

2SC5387 (F,M)

Bipolar Transistors - BJT

Manufacturer:

Mfr Part:
2SC5387 (F,M)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-HIS-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max600 V
Collector- Base Voltage VCBO1.5 kV
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current10 A
Pd - Power Dissipation50 W
Gain Bandwidth Product fT1.7 MHz
Maximum Operating Temperature+ 150 C
Series2SC5387
DC Collector/Base Gain hfe Min15
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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