2SC5200N(S1,E Toshiba

2SC5200N(S1,E

Bipolar Transistors - BJT

Manufacturer:

Mfr Part:
2SC5200N(S1,E

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Collector- Base Voltage VCBO230 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage400 mV
Maximum DC Collector Current15 A
Gain Bandwidth Product fT30 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Series2SC
Continuous Collector Current15 A
DC Collector/Base Gain hfe Min55
DC Current Gain hFE Max160
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Each

Pricing not available for this package type
Need pricing?