Reference Only

2SA1987-O(Q)

Bipolar Transistors - BJT .

Manufacturer:

Mfr Part:
2SA1987-O(Q)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / Case2-21F1A-3
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Collector- Base Voltage VCBO230 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.5 V
Maximum DC Collector Current15 A
Pd - Power Dissipation180 W
Gain Bandwidth Product fT30 MHz
Maximum Operating Temperature+ 150 C
Series2SA
PackagingTray
Continuous Collector Current- 15 A
DC Collector/Base Gain hfe Min55 at - 1 A, - 5 V
DC Current Gain hFE Max160
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 10 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tray

(Minimum: 100 / Multiples: 1)
Quantity Unit PriceExt. Price
$1.94$194.00
$1.64$820.00
$1.58$1,580.00
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