Reference Only

2SA1987

Bipolar Transistors - BJT

Manufacturer:

Mfr Part:
2SA1987

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
Mounting StyleThrough Hole
Package / Case2-21F1A-3
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max230 V
Collector- Base Voltage VCBO230 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.5 V
Maximum DC Collector Current1.5 A
Gain Bandwidth Product fT30 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Series2SA
Continuous Collector Current- 1.5 A
DC Collector/Base Gain hfe Min55
DC Current Gain hFE Max160
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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