Reference Only
2SA1955FVATPL3Z
End of Life
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO
Datasheet
2SA1955FVATPL3Z DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOT-723-3 | |
| Transistor Polarity | PNP | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 12 V | |
| Collector-Emitter Saturation Voltage | 30 mV | |
| Series | 2SA1955 | |
| Packaging | Reel | |
| Continuous Collector Current | - 400 mA | |
| DC Collector/Base Gain hfe Min | 300 | |
| DC Current Gain hFE Max | 1000 | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541100000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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Reel
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