2N3209 Toshiba

2N3209

Bipolar Transistors - BJT

Manufacturer:

Mfr Part:
2N3209

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max20 V
Collector- Base Voltage VCBO20 V
Emitter- Base Voltage VEBO4 V
Gain Bandwidth Product fT400 MHz
Series2N3209
DC Collector/Base Gain hfe Min25 at 10 mA, 300 mV
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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