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SQW61N65EF-GE3

MOSFETs TO247 650V 62A N-CH MOSFET

Manufacturer:

Mfr Part:
SQW61N65EF-GE3

TTI Part:
SQW61N65EF-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247AD-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current62 A
Rds On - Drain-Source Resistance52 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge229 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation625 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingTube
ConfigurationSingle
Fall Time102 ns
Product TypeMOSFETs
Rise Time107 ns
SeriesSQW
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time252 ns
Typical Turn-On Delay Time65 ns

Export and Environmental Classification

AttributeDescription
Country of OriginGermany
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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