Reference Only

SQJQ186E-T1 GE3

MOSFETs PPAK8X8 N-CH 80V 245A

Manufacturer:

Mfr Part:
SQJQ186E-T1 GE3

TTI Part:
SQJQ186E-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK 8 x 8L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current245 A
Rds On - Drain-Source Resistance2.3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge123 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation357 W
Channel ModeEnhancement
Fall Time16 ns
Product TypeMOSFETs
Rise Time21 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time53 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

2,000In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Each

(Minimum: 2,000 / Multiples: 2,000)
Quantity Unit PriceExt. Price
$1.21$2,420.00
Need more?

My Notes

Sign into see notes.