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SQJQ160E-T1 GE3

MOSFETs PPAK8X8 N-CH 60V 602A

Manufacturer:

Mfr Part:
SQJQ160E-T1 GE3

TTI Part:
SQJQ160E-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8-8L-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current602 A
Rds On - Drain-Source Resistance520 uOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge183 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation600 W
Channel ModeEnhancement
PackagingReel
Fall Time19 ns
Forward Transconductance - Min205 s
Product TypeMOSFETs
Rise Time18 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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