Reference Only

SQJ186ELP-T1 GE3

MOSFETs PPAKSO8 N-CH 80V 66A

Manufacturer:

Mfr Part:
SQJ186ELP-T1 GE3

TTI Part:
SQJ186ELP-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current21 A
Rds On - Drain-Source Resistance125 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge45 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation132 W
Channel ModeEnhancement
PackagingReel
Fall Time36 ns
Forward Transconductance - Min2.4 S
Product TypeMOSFETs
Rise Time54 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time64 ns
Typical Turn-On Delay Time40 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 37 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.392$1,176.00
Need more?

My Notes

Sign into see notes.