Reference Only

SIHU6N62E-GE3

MOSFETs 620V Vds 30V Vgs IPAK (TO-251)

Manufacturer:

Mfr Part:
SIHU6N62E-GE3

TTI Part:
SIHU6N62E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-251-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage620 V
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance900 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge17 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time16 ns
Product TypeMOSFETs
Rise Time10 ns
SeriesSIHU E
SubcategoryTransistors
Typical Turn-Off Delay Time22 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

30,000In Stock

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$0.68$34.00
$0.674$67.40
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