Reference Only

SIHP4N80E-GE3

MOSFETs 800V Vds 30V Vgs TO-220AB

Manufacturer:

Mfr Part:
SIHP4N80E-GE3

TTI Part:
SIHP4N80E-GE3

EDA / CAD Models

Alternate Part Number

SIHP4N80E-BE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current4.3 A
Rds On - Drain-Source Resistance1.1 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge16 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation69 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time20 ns
Product TypeMOSFETs
Rise Time7 ns
SeriesSIHP E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Typical Turn-On Delay Time12 ns
Part # AliasesSIHP4N80E-BE3

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

3,000In Stock

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(Minimum: 1,000 / Multiples: 1,000)
Quantity Unit PriceExt. Price
$0.714$714.00
$0.707$1,414.00
$0.70$2,100.00
$0.693$3,465.00
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