Reference Only

SIHP35N60E-BE3

MOSFETs TO220 600V 32A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHP35N60E-BE3

TTI Part:
SIHP35N60E-BE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current32 A
Rds On - Drain-Source Resistance82 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge132 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time32 ns
Product TypeMOSFETs
Rise Time61 ns
SeriesSIHP E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time78 ns
Typical Turn-On Delay Time29 ns
Part # AliasesSIHP35N60E-GE3

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

Technical Resources

EDA / CAD Models

1,000In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 50 / Multiples: 50)
Quantity Unit PriceExt. Price
$3.11$155.50
$3.08$308.00
Need more?

My Notes

Sign into see notes.