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SIHP180N60E-GE3

MOSFETs 600V Vds 30V Vgs TO-220AB

Manufacturer:

Mfr Part:
SIHP180N60E-GE3

TTI Part:
SIHP180N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance180 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge22 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation156 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time23 ns
Forward Transconductance - Min5.3 S
Product TypeMOSFETs
Rise Time49 ns
SeriesSIHP E
SubcategoryTransistors
Transistor Type1 N-Channel E-Series Power MOSFET
Typical Turn-Off Delay Time22 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

1,000In Stock

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(Minimum: 1,000 / Multiples: 1,000)
Quantity Unit PriceExt. Price
$1.67$1,670.00
$1.65$3,300.00
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