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SIHP12N50E-GE3

MOSFETs 500V Vds 30V Vgs TO-220AB

Manufacturer:

Mfr Part:
SIHP12N50E-GE3

TTI Part:
SIHP12N50E-GE3

EDA / CAD Models

Alternate Part Number

SIHP12N50E-BE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current10.5 A
Rds On - Drain-Source Resistance380 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge25 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation114 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time12 ns
Product TypeMOSFETs
Rise Time16 ns
SeriesSIHP E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time13 ns
Part # AliasesSIHP12N50E-BE3

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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