Reference Only
SIHG70N60AEF-GE3
MOSFETs 600V Vds 20V Vgs TO-247AC
Datasheet
SIHG70N60AEF-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Id - Continuous Drain Current | 60 A | |
| Rds On - Drain-Source Resistance | 35.5 mOhms | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Qg - Gate Charge | 410 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 417 W | |
| Channel Mode | Enhancement | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 113 ns | |
| Forward Transconductance - Min | 23 S | |
| Peak Solder Temperature | + 300 C | |
| Pin Count | 3 | |
| Product Type | MOSFETs | |
| Rise Time | 104 ns | |
| Series | SIHG EF | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 219 ns | |
| Typical Turn-On Delay Time | 45 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Israel |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
Documents
Datasheet
Technical Resources
500In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 50 / Multiples: 50)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $8.35 | $417.50 | |
| $7.93 | $793.00 | |
| $7.70 | $1,925.00 | |
| $7.62 | $3,810.00 | |
| $7.33 | $7,330.00 | |
| $7.26 | $14,520.00 | |
| $7.19 | $28,760.00 | |
| $7.11 | $56,880.00 |
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