Reference Only

SIHG47N65E-GE3

MOSFETs 650V Vds 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG47N65E-GE3

TTI Part:
SIHG47N65E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current47 A
Rds On - Drain-Source Resistance72 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge182 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation417 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time103 ns
Product TypeMOSFETs
Rise Time87 ns
SeriesSIHG E
SubcategoryTransistors
Typical Turn-Off Delay Time156 ns
Typical Turn-On Delay Time47 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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