Reference Only

SIHG22N60E-GE3

MOSFETs 600V Vds 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG22N60E-GE3

TTI Part:
SIHG22N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current21 A
Rds On - Drain-Source Resistance180 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge57 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation227 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time35 ns
Product TypeMOSFETs
Rise Time27 ns
SeriesSIHG E
SubcategoryTransistors
Typical Turn-Off Delay Time66 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

3,850In Stock

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$2.26$226.00
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$2.20$4,400.00
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