Reference Only

SIHG21N80AE-GE3

MOSFETs TO247 800V 16.3A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHG21N80AE-GE3

TTI Part:
SIHG21N80AE-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current17.4 A
Rds On - Drain-Source Resistance235 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge48 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation32 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time76 ns
Product TypeMOSFETs
Rise Time38 ns
SeriesSIHG E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time71 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

Technical Resources

EDA / CAD Models

500In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 50 / Multiples: 50)
Quantity Unit PriceExt. Price
$2.51$125.50
$2.47$247.00
$2.44$1,220.00
$2.40$2,160.00
$2.36$4,720.00
Need more?

My Notes

Sign into see notes.