Reference Only
SIHG17N80E-GE3
MOSFETs 800V Vds 30V Vgs TO-247AC
Datasheet
SIHG17N80E-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Id - Continuous Drain Current | 15 A | |
| Rds On - Drain-Source Resistance | 250 mOhms | |
| Vgs - Gate-Source Voltage | 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qg - Gate Charge | 122 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 208 W | |
| Channel Mode | Enhancement | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 26 ns | |
| Product Type | MOSFETs | |
| Rise Time | 24 ns | |
| Series | SIHG E | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 71 ns | |
| Typical Turn-On Delay Time | 22 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Israel |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
Documents
Datasheet
Technical Resources
500In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 50 / Multiples: 50)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $3.64 | $182.00 | |
| $3.34 | $334.00 | |
| $3.24 | $810.00 | |
| $3.15 | $1,575.00 | |
| $2.78 | $2,780.00 | |
| $2.75 | $5,500.00 | |
| $2.73 | $10,920.00 | |
| $2.70 | $21,600.00 |
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