Reference Only

SIHG17N80AE-GE3

MOSFETs TO247 800V 15A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHG17N80AE-GE3

TTI Part:
SIHG17N80AE-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current15 A
Rds On - Drain-Source Resistance250 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge41 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 155 C
Pd - Power Dissipation179 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time31 ns
Forward Transconductance - Min7.1 S
Product TypeMOSFETs
Rise Time23 ns
SeriesSIHG E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

Technical Resources

EDA / CAD Models

5,000In Stock

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Reel

(Minimum: 500 / Multiples: 500)
Quantity Unit PriceExt. Price
$1.60$800.00
$1.59$1,590.00
$1.57$2,355.00
$1.56$3,900.00
$1.54$7,700.00
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