Reference Only

SIHG120N60E-GE3

MOSFETs 650V Vds; 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG120N60E-GE3

TTI Part:
SIHG120N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current25 A
Rds On - Drain-Source Resistance120 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge45 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation179 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time33 ns
Forward Transconductance - Min6 S
Product TypeMOSFETs
Rise Time65 ns
SeriesSIHG E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
Country of OriginIsrael
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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