Reference Only

SIHFR9120-GE3

MOSFETs -100V Vds 20V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHFR9120-GE3

TTI Part:
SIHFR9120-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current5.6 A
Rds On - Drain-Source Resistance600 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge18 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation42 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time25 ns
Forward Transconductance - Min1.5 S
Product TypeMOSFETs
Rise Time29 ns
SeriesSIHFR
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time21 ns
Typical Turn-On Delay Time9.6 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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