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SIHFR9014-GE3

MOSFETs -60V Vds 20V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHFR9014-GE3

TTI Part:
SIHFR9014-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current5.1 A
Rds On - Drain-Source Resistance500 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge12 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation25 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time31 ns
Forward Transconductance - Min1.4 S
Product TypeMOSFETs
Rise Time63 ns
SeriesSIHFR
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time9.6 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 29 Weeks
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$0.237$711.00
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